Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2016-11, Vol.50 (11), p.1439-1442
• Main Authors: Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., Kraev, S. A., Surovegina, E. A., Shashkin, V. I., Yunin, P. A.
• Format: Article
• Language: English
• Subjects: 2016; Carrier density; CHARGE CARRIERS; CONCENTRATION RATIO; Contact resistance; DIFFUSION; Diffusion effects; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; Electric contacts; Electrical grounding; ELECTRON MOBILITY; Electronic devices; ELECTRONS; Epitaxial layers; Epitaxy; Gallium arsenide; GALLIUM ARSENIDES; Intermetallic compounds; LAYERS; Magnetic Materials; Magnetism; March 14–18; MATERIALS SCIENCE; Metalorganic chemical vapor deposition; Nizhny Novgorod; ORGANOMETALLIC COMPOUNDS; Physics; Physics and Astronomy; SEGREGATION; TELLURIDES; TELLURIUM; VAPOR PHASE EPITAXY; XX International Symposium “Nanophysics and Nanoelectronics”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782616110075

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10 21 cm –3 without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10 19 cm –3 ) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10 –6 Ω cm 2 ) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10 20 cm –3 are detected.