Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-11, Vol.50 (11), p.1435-1438
Main Authors: Yablonsky, A. N., Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya, Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., Krasil’nik, Z. F.
Format: Article
Language:English
Subjects:
2016
GALLIUM ANTIMONIDES
Gallium arsenide
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
Nizhny Novgorod
OPACITY
OPTICAL PUMPING
Physics
Physics and Astronomy
QUANTUM WELLS
SILICON
Silicon substrates
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
XX International Symposium “Nanophysics and Nanoelectronics”
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616110269