Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals ( ncs -Si) embedded in an oxide tunnel layer (SiO x = 1.5) and the tunnel oxide traps levels for a single electron photodetector (...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1163-1167
Main Authors: Chatbouri, S., Troudi, M., Sghaier, N., Kalboussi, A., Aimez, V., Drouin, D., Souifi, A.
Format: Article
Language:English
Subjects:
CAPACITANCE
CHARGE CARRIERS
Current carriers
ELECTRIC CONDUCTIVITY
ELECTRONS
Exchanging
HOLES
HYSTERESIS
ILLUMINANCE
Illumination
INTERFACES
LAYERS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Nanocrystals
NANOSTRUCTURES
PHOTOCURRENTS
PHOTODETECTORS
Photoelectric effect
Photometers
Physics
Physics and Astronomy
Quantum Phenomena
Room temperature
Semiconductor Structures
SILICON
SILICON OXIDES
Single electrons
TEMPERATURE RANGE 0273-0400 K
TRAPPING
TRAPS
Tunnels
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Summary:In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals ( ncs -Si) embedded in an oxide tunnel layer (SiO x = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole ( e–h ) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs -Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs -Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616090062