Changes in the conductivity of lead-selenide thin films after plasma etching

The conductivity of epitaxial n - and p -PbSe thin films after dry etching in radio-frequency highdensity low-pressure inductively coupled argon plasma at a bombarding-ion energy of 200 eV is studied. It is shown that the observed changes in the conductivity can be adequately interpreted in the cont...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-08, Vol.50 (8), p.1125-1129
Main Authors: Zimin, S. P., Amirov, I. I., Naumov, V. V.
Format: Article
Language:English
Subjects:
Analysis
ANNEALING
ARGON
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
Electric properties
EPITAXY
ETCHING
Fabrication
IRRADIATION
LEAD SELENIDES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MEAN FREE PATH
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
Physics
Physics and Astronomy
PLASMA
Radiation (Physics)
RADIOWAVE RADIATION
TEMPERATURE RANGE 0273-0400 K
Testing of Materials and Structures
THIN FILMS
Treatment
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Summary:The conductivity of epitaxial n - and p -PbSe thin films after dry etching in radio-frequency highdensity low-pressure inductively coupled argon plasma at a bombarding-ion energy of 200 eV is studied. It is shown that the observed changes in the conductivity can be adequately interpreted in the context of the classical model of the generation of donor-type radiation defects and that the processes of post-irradiation vacuum annealing result in the removal of such defects. The mean free path of charge carriers in p -PbSe films is determined within the context of the Fuchs–Sondheimer theory. It is found that, at room temperature, this parameter is 16 and 32 nm for the specularity parameter 0 and 0.5, respectively.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616080261