A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}

We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{...

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Bibliographic Details
Published in:The Journal of chemical physics 2016-04, Vol.144 (13)
Main Authors: Wiggers, F. B., Van Bui, H., Schmitz, J., Kovalgin, A. Y., Jong, M. P. de, Friedlein, R., Yamada-Takamura, Y.
Format: Article
Language:English
Subjects:
AMMONIA
CRYSTAL GROWTH
ELECTRON DIFFRACTION
EPITAXY
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
LAYERS
NITRIDATION
NITRIDES
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
THIN FILMS
ZIRCONIUM BORIDES
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Summary:We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{sub 2}  surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH{sub 3} at 400 °C leads to surface  nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB{sub 2} subsurface layers. In this way, a new nitride-based epitaxial  surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.4944579