Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

Threshold characteristics of a semiconductor quantum-well (QW) laser are calculated using the global electroneutrality condition, which includes charge carriers both in the active and waveguide regions and thus presents an equality of the total charge of electrons to the total charge of holes in the...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2016-01, Vol.46 (9), p.777-781
Main Authors: Sokolova, Z.N., Pikhtin, N.A., Tarasov, I.S., Asryan, L.V.
Format: Article
Language:English
Subjects:
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current carriers
Density
ELECTRON DENSITY
electroneutrality condition
ELECTRONS
HOLES
LASER RADIATION
Lasers
Lasing
QUANTUM WELLS
semiconductor lasers
SEMICONDUCTOR MATERIALS
Semiconductors
Thresholds
VELOCITY
WAVEGUIDES
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Summary:Threshold characteristics of a semiconductor quantum-well (QW) laser are calculated using the global electroneutrality condition, which includes charge carriers both in the active and waveguide regions and thus presents an equality of the total charge of electrons to the total charge of holes in these two regions. It is shown that at the lasing threshold, the densities of electrons in the QW and the waveguide region are not equal to the densities of holes in these regions, i.e., the local electroneutrality condition is violated in each of the regions. Depending on the velocities of the carrier capture from the waveguide region into the QW, the electron density can be either higher or lower than the hole density (both in the QW and in the waveguide region). The charge of the carriers of each sign in the waveguide region is shown to be greater than that in the QW.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL16181