Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

[Display omitted] •We fabricated AOS TFTs using Al co-sputtered IZO thin films as active layers.•Low Al ratio in IZO thin films suppresses carrier concentration and oxygen vacancies.•Addition of 0.62wt.% Al into IZO could reduce the chance of creating trap states.•Fabricated Al-IZO TFT has improved...

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Bibliographic Details
Published in:Materials research bulletin 2017-12, Vol.96 (Part 3), p.155-159
Main Authors: Park, Ji-in, Lim, Yooseong, Jang, Minhyung, Choi, Seung-il, Hwang, Namgyung, Yi, Moonsuk
Format: Article
Language:English
Subjects:
A. Amorphous materials
A. Oxides
A. Thin films
ATOMS
B. Sputtering
D. Electrical properties
ELECTRICAL PROPERTIES
INDIUM OXIDES
MATERIALS SCIENCE
OXIDATION
OXYGEN
PARTIAL PRESSURE
RADIOWAVE RADIATION
THIN FILMS
TRANSISTORS
ZINC OXIDES
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Summary:[Display omitted] •We fabricated AOS TFTs using Al co-sputtered IZO thin films as active layers.•Low Al ratio in IZO thin films suppresses carrier concentration and oxygen vacancies.•Addition of 0.62wt.% Al into IZO could reduce the chance of creating trap states.•Fabricated Al-IZO TFT has improved bias stability under bias stress conditions.•Optical transmittance of Al-IZO film greater than 90% in visible light (400–800nm). The electrical performance and bias stability of radio-frequency magnetron co-sputtered aluminum-indium-zinc oxide (Al-IZO) thin-film transistors (TFTs) were investigated, with respect to the atomic proportions of Al. Other parameters such as the indium-zinc oxide (IZO) target power, oxygen partial pressure, and initial and process pressures of the chamber were fixed. At a low Al atomic ratio (0.62wt.%), the electrical performance and bias stability of the Al-IZO TFT were optimized because of the suppression of the generation of oxygen vacancies and the strong bond between Al and oxygen atoms (Al–O; 501.9kJ/mol). Compared to pure IZO TFTs, the Al-IZO TFT exhibited a small shift in the threshold voltage under bias stress conditions. A higher threshold voltage of −2.24V and an improved subthreshold swing of 1.35V/dec were also observed. We demonstrated that the Al-IZO TFT could be a promising candidate for switching and driving operations in mass-produced display applications.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2017.05.001