Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1529-1533
Main Authors: Mizerov, A. M., Timoshnev, S. N., Sobolev, M. S., Nikitina, E. V., Shubina, K. Yu, Berezovskaia, T. N., Shtrom, I. V., Bouravleuv, A. D.
Format: Article
Language:English
Subjects:
2018
CRYSTAL GROWTH
Epitaxial growth
GALLIUM NITRIDES
Initial conditions
Magnetic Materials
Magnetism
March 12–15
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
Nitrogen
Nizhny Novgorod
Physics
Physics and Astronomy
Polarity
Silicon substrates
Stoichiometry
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
Xxii International Symposium “Nanophysics and Nanoelectronics”
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Summary:The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618120175