Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation

The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transis...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1518-1524
Main Authors: Venediktov, M. M., Tarasova, E. A., Bozhen’kina, A. D., Obolensky, S. V., Elesin, V. V., Chukov, G. V., Metelkin, I. O., Krevskiy, M. A., Dukov, D. I., Fefelov, A. G.
Format: Article
Language:English
Subjects:
2018
IRRADIATION
Magnetic Materials
Magnetism
March 12–15
MATERIALS SCIENCE
MICROWAVE RADIATION
Neutron irradiation
Neutrons
Nizhny Novgorod
Physics
Physics and Astronomy
Radiation effects
Semiconductor devices
SEMICONDUCTOR MATERIALS
TRANSISTORS
Xxii International Symposium “Nanophysics and Nanoelectronics”
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Summary:The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618120266