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Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current

At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF 2 (111) substrates. The obtained results agree with experiments on the effect of treatmen...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1505-1510
Main Authors: Akimov, A. N., Klimov, A. E., Epov, V. S.
Format: Article
Language:English
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Summary:At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF 2 (111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 10 3 times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618120035