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Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF 2 (111) substrates. The obtained results agree with experiments on the effect of treatmen...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1505-1510 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | At
T
= 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF
2
(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 10
3
times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782618120035 |