Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-06, Vol.52 (6), p.789-796
Main Authors: Malin, T. V., Milakhin, D. S., Mansurov, V. G., Galitsyn, Yu. G., Kozhuhov, A. S., Ratnikov, V. V., Smirnov, A. N., Davydov, V. Yu, Zhuravlev, K. S.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
Aluminum
Aluminum compounds
Aluminum nitride
Ammonia
Analysis
Atomic structure
CRYSTAL GROWTH
Epitaxial growth
Epitaxy
Fabrication
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
Monolayers
NITRIDATION
Physics
Physics and Astronomy
Sapphire
Substrates
Testing of Materials and Structures
Thickness
Treatment
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Summary:The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618060143