Ion Synthesis: Si–Ge Quantum Dots

We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10 14 to 10 17 cm –2 , ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environ...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-05, Vol.52 (5), p.625-627
Main Authors: Gerasimenko, N. N., Balakleyskiy, N. S., Volokhovskiy, A. D., Smirnov, D. I., Zaporozhan, O. A.
Format: Article
Language:English
Subjects:
2017. Nanostructure Technology
Annealing
Chemical synthesis
Germanium
ION BEAMS
Ion implantation
June 26–30
KEV RANGE
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Nitrides
Optical properties
Photoluminescence
Physics
Physics and Astronomy
QUANTUM DOTS
Quantum wells
Russia
Saint Petersburg
Silicides
Silicon
TEMPERATURE RANGE 0400-1000 K
XXV International Symposium “Nanostructures: Physics and Technology”
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Summary:We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10 14 to 10 17 cm –2 , ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618050081