Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnet...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2018-01, Vol.126 (1), p.115-125
Main Authors: Esmaeili, A. M., Useinov, A. N., Useinov, N. Kh
Format: Article
Language:English
Subjects:
Barriers
Classical and Quantum Gravitation
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Conduction electrons
ELECTRIC POTENTIAL
Electronic Properties of Solid
Electrons
Elementary Particles
Ferromagnetism
LAYERS
Magnetic resonance
MAGNETIC TUNNEL JUNCTIONS
MAGNETORESISTANCE
Magnetoresistivity
MATERIALS SCIENCE
Mathematical analysis
NANOPARTICLES
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Field Theory
Relativity Theory
Resistance
Solid State Physics
SPIN
Thickness
TORQUE
TUNNEL EFFECT
Tunnel junctions
Tunnel magnetoresistance
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Summary:Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776118010168