X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide

An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with Cu K α1 -radiation). The XRD data demonstrate that the sample consists of (coherent) align...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-01, Vol.52 (1), p.84-87
Main Authors: Boiko, M. E., Sharkov, M. D., Karlina, L. B., Boiko, A. M., Konnikov, S. G.
Format: Article
Language:English
Subjects:
Analysis
Composite Semiconductors
DOPED MATERIALS
Indium
INDIUM PHOSPHIDES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
Nanocrystalline
NUCLEAR MAGNETIC RESONANCE
Physics
Physics and Astronomy
Porous
POROUS MATERIALS
SMALL ANGLE SCATTERING
Small angle X ray scattering
Symmetry
SYMMETRY GROUPS
X-RAY DIFFRACTION
X-rays
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Summary:An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with Cu K α1 -radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C 2 v in the (001) plane of the sample lattice.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618010074