Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure

The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the loc...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-01, Vol.52 (1), p.78-83
Main Authors: Zhukov, N. D., Kabanov, V. F., Mihaylov, A. I., Mosiyash, D. S., Pereverzev, Ya. E., Hazanov, A. A., Shishkin, M. I.
Format: Article
Language:English
Subjects:
Composite Semiconductors
Electromagnetic radiation
ELECTRON EMISSION
Electrons
Emission analysis
Emissions (Pollution)
Emissions control
Emitters
Emitters (electron)
Gallium arsenide
GALLIUM ARSENIDES
Group III-V semiconductors
INDIUM ANTIMONIDES
INDIUM ARSENIDES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
Nanocrystalline
NUCLEAR MAGNETIC RESONANCE
Optical measuring instruments
Physics
Physics and Astronomy
Porous
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
Semiconductors
Sensors
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Summary:The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618010256