Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers

A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one type of charge carrier while allowing the transport...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.248-253
Main Authors: Zubov, F. I., Maximov, M. V., Gordeev, N. Yu, Polubavkina, Yu. S., Zhukov, A. E.
Format: Article
Language:English
Subjects:
Analysis
Asymmetry
Barrier layers
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
Current carriers
DESIGN
DIFFUSION BARRIERS
ELASTICITY
Electron transport
ENERGY SPECTRA
Energy transmission
INHIBITION
Lasers
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
Physics of Semiconductor Devices
RECOMBINATION
SEMICONDUCTOR LASERS
Strain
VENTILATION BARRIERS
WAVEGUIDES
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Summary:A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one type of charge carrier while allowing the transport of the other type of carrier. The spacer in the double asymmetric barrier can serve to compensate the elastic strain introduced by the barrier layers as well as to control the energy spectrum of charge carriers and, thus, the transmission coefficient. By the example of a laser with Al 0.2 Ga 0.8 As waveguide layers, it is shown that the design with double asymmetric barriers makes it possible to suppress undesirable electron transport by a factor of 4 in comparison to the design using single asymmetric barriers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618020240