Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates

Cu{sub 2}ZnSnSe{sub 4} thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu{sub 2}ZnSnSe{...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2)
Main Authors: Stanchik, A. V., Gremenok, V. F., Bashkirov, S. A., Tivanov, M. S., Juškénas, R. L., Novikov, G. F., Giraitis, R., Saad, A. M.
Format: Article
Language:English
Subjects:
CRYSTAL STRUCTURE
DEPOSITS
ELECTROCHEMISTRY
MATERIALS SCIENCE
METALS
PHASE STUDIES
RAMAN EFFECT
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
THIN FILMS
X RADIATION
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Summary:Cu{sub 2}ZnSnSe{sub 4} thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu{sub 2}ZnSnSe{sub 4} films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618020197