Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.165-171
• Main Authors: Sobolev, M. M., Soldatenkov, F. Yu
• Format: Article
• Language: English
• Subjects: Absorption cross sections; ACTIVATION ENERGY; Case depth; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; Dislocations; Electronic Properties of Semiconductors; Epitaxial growth; Epitaxy; Gallium arsenide; GALLIUM ARSENIDES; Heterostructures; INDIUM ARSENIDES; Indium gallium arsenides; LIQUID PHASE EPITAXY; Magnetic Materials; Magnetism; MATERIALS SCIENCE; MEV RANGE; Misfit dislocations; Physics; Physics and Astronomy; RELAXATION TIME; Spectrum analysis
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782618020173

The results of an experimental study of the capacitance–voltage ( C – V ) characteristics and deep-level transient spectroscopy (DLTS) spectra of p + – p 0 – i – n 0 homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL 2 and HL 5 are found in the epitaxial p 0 and n 0 layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED 1 and HD 3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies ( E t ), capture cross sections (σ p ), and concentrations ( N t ) are calculated from the Arrhenius dependences to be E t = 845 meV, σ p = 1.33 × 10 –12 cm 2 , N t = 3.80 × 10 14 cm –3 for InGaAs/GaAs and E t = 848 meV, σ p = 2.73 × 10 –12 cm 2 , N t = 2.40 × 10 14 cm –3 for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10 –10 s and 1.5 × 10 –10 s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10 –6 s for the GaAs homostructures.