Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm....

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1477-1480
Main Authors: Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Fefelov, A. G., Yurasov, D. V., Krasilnik, Z. F.
Format: Article
Language:English
Subjects:
2017
ALUMINIUM ARSENIDES
Aluminum gallium arsenide lasers
BUFFERS
CHEMICAL VAPOR DEPOSITION
Complementary metal oxide semiconductors
Computer memory
Gallium arsenide
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
Integrated circuit fabrication
LASERS
Magnetic Materials
Magnetism
March 13–16
MATERIALS SCIENCE
Metalorganic chemical vapor deposition
Nizhny Novgorod
Optical instruments
Organic chemicals
ORGANOMETALLIC COMPOUNDS
Physics
Physics and Astronomy
Product development
PULSES
QUANTUM WELLS
Semiconductor lasers
Silicon substrates
Spectral emissivity
STIMULATED EMISSION
SUBSTRATES
Technology application
TEMPERATURE RANGE 0273-0400 K
XXI International Symposium “Nanophysics and Nanoelectronics”
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617110057