Inhomogeneous dopant distribution in III–V nanowires

We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1427-1430
Main Authors: Leshchenko, E. D., Dubrovskii, V. G.
Format: Article
Language:English
Subjects:
2017
DIFFUSION EQUATIONS
Dopants
DOPED MATERIALS
Epitaxial growth
Epitaxy
Gallium arsenide
GALLIUM ARSENIDES
Inhomogeneity
Magnetic Materials
Magnetism
March 13–16
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOWIRES
Nizhny Novgorod
Physics
Physics and Astronomy
Semiconductors (Materials)
SPATIAL DISTRIBUTION
XXI International Symposium “Nanophysics and Nanoelectronics”
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Summary:We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617110173