Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 10 14 cm –2 and annealed at a temperature of 700°C for 1 h in a chlorine-containing atmosphere is studied. The temperature depend...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-09, Vol.51 (9), p.1133-1135
Main Authors: Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Shtel’makh, K. F.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
Analysis
Annealing
Chlorine
DEFECTS
Electronic Properties of Semiconductors
HYDROGEN 1
LABELLING
Luminescence
Magnetic Materials
Magnetism
MASS SPECTROSCOPY
MATERIALS SCIENCE
Measurement
MEV RANGE
NUCLEAR MAGNETIC RESONANCE
Optical properties
OXYGEN IONS
Photoluminescence
Physics
Physics and Astronomy
Quenching (cooling)
Silicon
TEMPERATURE DEPENDENCE
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Summary:Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 10 14 cm –2 and annealed at a temperature of 700°C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617090202