Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field

Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-05, Vol.51 (5), p.594-603
Main Author: Pashkovskii, A. B.
Format: Article
Language:English
Subjects:
ELECTRIC FIELDS
Electron transport
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Mathematical analysis
Open systems
Physics
Physics and Astronomy
Quantum Phenomena
RESONANCE
Resonant tunneling
Semiconductor Structures
TUNNEL EFFECT
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are reported. The dependences of the width and shape of resonant levels on the high-frequency field amplitude are investigated. It is shown that, in these structures there are almost always conditions at which nonresonant scattering channels near the quantum levels can become absolutely transparent.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617050207