Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies

Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition...

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Bibliographic Details
Published in:Physics of the solid state 2018-04, Vol.60 (4), p.644-662
Main Authors: Il’in, I. V., Uspenskaya, Yu. A., Kramushchenko, D. D., Muzafarova, M. V., Soltamov, V. A., Mokhov, E. N., Baranov, P. G.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
ALUMINIUM ADDITIONS
Analysis
AXIAL SYMMETRY
BORON ADDITIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DOUBLE RESONANCE METHODS
Electron paramagnetic resonance
Electron spin
ELECTRON SPIN RESONANCE
ELECTRONS
ENDOR
GALLIUM COMPOUNDS
JAHN-TELLER EFFECT
LANDE FACTOR
ORTHORHOMBIC LATTICES
Physics
Physics and Astronomy
Semiconductors
Silicon
Silicon carbide
SILICON CARBIDES
Solid State Physics
Spin resonance
STRUCTURAL MODELS
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Summary:Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn–Teller effect.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783418040121