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Formation of High-Field Pinning Centers in Superconducting MgB{sub 2} Wires by Using High Hot Isostatic Pressure Process

This paper demonstrates the effects of hot isostatic pressure (HIP) on the structure and transport critical parameters of in situ MgB{sub 2} wires without a barrier. Our results show that only HIP and nano-boron allow the formation of more high-field pinning centers, which lead to the increase in cr...

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Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2017-12, Vol.30 (12)
Main Authors: Gajda, D., Morawski, A., Zaleski, A. J., Akdoğan, M., Yetiş, H., Karaboğa, F., Cetner, T., Belenli, İ.
Format: Article
Language:English
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Summary:This paper demonstrates the effects of hot isostatic pressure (HIP) on the structure and transport critical parameters of in situ MgB{sub 2} wires without a barrier. Our results show that only HIP and nano-boron allow the formation of more high-field pinning centers, which lead to the increase in critical current density (J{sub c}) at high applied magnetic fields. Nano-boron and annealing at a low pressure increase the J{sub c} in the low magnetic field. This indicates that nano-particles create more high-field pinning centers. In addition, the results show that nano-boron improves the connection between the grains. Scanning electron microscope results show that HIP increases the reaction rate between Mg and B, density, and homogeneity of the MgB{sub 2} material. Additionally, HIP allows to create a structure with small grains and voids and eliminates the significance of the number of voids. High isostatic pressure allows to obtain high J{sub c} of 10 A/mm{sup 2} (at 4.2 K) in 10 T and increases irreversible magnetic field (B{sub irr}) and upper critical field (B{sub c2}). Measurements show that these wires have high critical temperature of 37 K.
ISSN:1557-1939
1557-1947
DOI:10.1007/S10948-017-4161-Y