A study of the effect of electron and proton irradiation on 4H-SiC device structures

The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration ( N d – N a ) in the base electrode of Schottky diodes and JBS diodes based on 4 H -SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate w...

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Bibliographic Details
Published in:Technical physics letters 2017-11, Vol.43 (11), p.1027-1029
Main Authors: Lebedev, A. A., Davydovskaya, K. S., Yakimenko, A. N., Strel’chuk, A. M., Kozlovskii, V. V.
Format: Article
Language:English
Subjects:
CARRIERS
Classical and Continuum Physics
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current voltage characteristics
Devices
ELECTRIC CONDUCTIVITY
Electron irradiation
ELECTRONS
IMPURITIES
IRRADIATION
MEV RANGE
PHYSICAL RADIATION EFFECTS
Physics
Physics and Astronomy
Proton irradiation
PROTONS
RADIATION DOSES
RADIATION HARDNESS
SCHOTTKY BARRIER DIODES
Schottky diodes
Silicon carbide
SILICON CARBIDES
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Summary:The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration ( N d – N a ) in the base electrode of Schottky diodes and JBS diodes based on 4 H -SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm –1 under electron irradiation and 50–70 cm –1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm –2 . It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785017110256