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A study of the effect of electron and proton irradiation on 4H-SiC device structures
The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration ( N d – N a ) in the base electrode of Schottky diodes and JBS diodes based on 4 H -SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate w...
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| Published in: | Technical physics letters 2017-11, Vol.43 (11), p.1027-1029 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c344t-46a4537d0e3616d4b9544d7e3324c10bf68e124bdb2d61f90f89f6ca2ad86b263 |
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| cites | cdi_FETCH-LOGICAL-c344t-46a4537d0e3616d4b9544d7e3324c10bf68e124bdb2d61f90f89f6ca2ad86b263 |
| container_end_page | 1029 |
| container_issue | 11 |
| container_start_page | 1027 |
| container_title | Technical physics letters |
| container_volume | 43 |
| creator | Lebedev, A. A. Davydovskaya, K. S. Yakimenko, A. N. Strel’chuk, A. M. Kozlovskii, V. V. |
| description | The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (
N
d
–
N
a
) in the base electrode of Schottky diodes and JBS diodes based on 4
H
-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm
–1
under electron irradiation and 50–70 cm
–1
under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm
–2
. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon
p–i–n
diodes with similar breakdown voltages. |
| doi_str_mv | 10.1134/S1063785017110256 |
| format | article |
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N
d
–
N
a
) in the base electrode of Schottky diodes and JBS diodes based on 4
H
-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm
–1
under electron irradiation and 50–70 cm
–1
under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm
–2
. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon
p–i–n
diodes with similar breakdown voltages.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785017110256</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>CARRIERS ; Classical and Continuum Physics ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current voltage characteristics ; Devices ; ELECTRIC CONDUCTIVITY ; Electron irradiation ; ELECTRONS ; IMPURITIES ; IRRADIATION ; MEV RANGE ; PHYSICAL RADIATION EFFECTS ; Physics ; Physics and Astronomy ; Proton irradiation ; PROTONS ; RADIATION DOSES ; RADIATION HARDNESS ; SCHOTTKY BARRIER DIODES ; Schottky diodes ; Silicon carbide ; SILICON CARBIDES</subject><ispartof>Technical physics letters, 2017-11, Vol.43 (11), p.1027-1029</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-46a4537d0e3616d4b9544d7e3324c10bf68e124bdb2d61f90f89f6ca2ad86b263</citedby><cites>FETCH-LOGICAL-c344t-46a4537d0e3616d4b9544d7e3324c10bf68e124bdb2d61f90f89f6ca2ad86b263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22784018$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lebedev, A. A.</creatorcontrib><creatorcontrib>Davydovskaya, K. S.</creatorcontrib><creatorcontrib>Yakimenko, A. N.</creatorcontrib><creatorcontrib>Strel’chuk, A. M.</creatorcontrib><creatorcontrib>Kozlovskii, V. V.</creatorcontrib><title>A study of the effect of electron and proton irradiation on 4H-SiC device structures</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (
N
d
–
N
a
) in the base electrode of Schottky diodes and JBS diodes based on 4
H
-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm
–1
under electron irradiation and 50–70 cm
–1
under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm
–2
. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon
p–i–n
diodes with similar breakdown voltages.</description><subject>CARRIERS</subject><subject>Classical and Continuum Physics</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current voltage characteristics</subject><subject>Devices</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electron irradiation</subject><subject>ELECTRONS</subject><subject>IMPURITIES</subject><subject>IRRADIATION</subject><subject>MEV RANGE</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Proton irradiation</subject><subject>PROTONS</subject><subject>RADIATION DOSES</subject><subject>RADIATION HARDNESS</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>SILICON CARBIDES</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1UMFKAzEQDaJgrX6AtwXPq5kkm909lqJWEDy0nkM2mdiUuluTrNC_N6WCgggD84Z57_FmCLkGegvAxd0SqOR1U1GoASir5AmZAG1pKSvOTw9Y8vKwPycXMW4opQ2r2glZzYqYRrsvBlekNRboHJp0mHCbQRj6Qve22IUhZehD0Nbr5DPOJRbl0s8Li5_eYPYJo0ljwHhJzpzeRrz67lPy-nC_mi_K55fHp_nsuTRciFQKqUXFa0uRS5BWdG0lhK2RcyYM0M7JBoGJznbMSnAtdU3rpNFM20Z2TPIpuTn6DjF5FY1PaNZm6PucXDFWN4JC88PKR3yMGJPaDGPoczAFbQ1UAGNVZsGRZcIQY0CndsG_67BXQNXhxerPi7OGHTUxc_s3DL-c_xV9AWBLez8</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Lebedev, A. A.</creator><creator>Davydovskaya, K. S.</creator><creator>Yakimenko, A. N.</creator><creator>Strel’chuk, A. M.</creator><creator>Kozlovskii, V. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20171101</creationdate><title>A study of the effect of electron and proton irradiation on 4H-SiC device structures</title><author>Lebedev, A. A. ; Davydovskaya, K. S. ; Yakimenko, A. N. ; Strel’chuk, A. M. ; Kozlovskii, V. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-46a4537d0e3616d4b9544d7e3324c10bf68e124bdb2d61f90f89f6ca2ad86b263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>CARRIERS</topic><topic>Classical and Continuum Physics</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current voltage characteristics</topic><topic>Devices</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>Electron irradiation</topic><topic>ELECTRONS</topic><topic>IMPURITIES</topic><topic>IRRADIATION</topic><topic>MEV RANGE</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Proton irradiation</topic><topic>PROTONS</topic><topic>RADIATION DOSES</topic><topic>RADIATION HARDNESS</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>SILICON CARBIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lebedev, A. A.</creatorcontrib><creatorcontrib>Davydovskaya, K. S.</creatorcontrib><creatorcontrib>Yakimenko, A. N.</creatorcontrib><creatorcontrib>Strel’chuk, A. M.</creatorcontrib><creatorcontrib>Kozlovskii, V. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lebedev, A. A.</au><au>Davydovskaya, K. S.</au><au>Yakimenko, A. N.</au><au>Strel’chuk, A. M.</au><au>Kozlovskii, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study of the effect of electron and proton irradiation on 4H-SiC device structures</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2017-11-01</date><risdate>2017</risdate><volume>43</volume><issue>11</issue><spage>1027</spage><epage>1029</epage><pages>1027-1029</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (
N
d
–
N
a
) in the base electrode of Schottky diodes and JBS diodes based on 4
H
-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm
–1
under electron irradiation and 50–70 cm
–1
under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm
–2
. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon
p–i–n
diodes with similar breakdown voltages.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785017110256</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2017-11, Vol.43 (11), p.1027-1029 |
| issn | 1063-7850 1090-6533 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22784018 |
| source | Springer Nature |
| subjects | CARRIERS Classical and Continuum Physics CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current voltage characteristics Devices ELECTRIC CONDUCTIVITY Electron irradiation ELECTRONS IMPURITIES IRRADIATION MEV RANGE PHYSICAL RADIATION EFFECTS Physics Physics and Astronomy Proton irradiation PROTONS RADIATION DOSES RADIATION HARDNESS SCHOTTKY BARRIER DIODES Schottky diodes Silicon carbide SILICON CARBIDES |
| title | A study of the effect of electron and proton irradiation on 4H-SiC device structures |
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