Experimental Simulation of a Diamond Betavoltaic Battery

Diamond single-crystal Schottky barrier mip -structures (metal–intrinsic diamond– p -doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP p -diamond and CVD i -diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-apertur...

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Bibliographic Details
Published in:Technical physics letters 2018-08, Vol.44 (8), p.697-699
Main Authors: Amosov, V. N., Babichev, V. N., Dyatko, N. A., Meshchaninov, S. A., Pal’, A. F., Rodionov, N. B., Ryabinkin, A. N., Starostin, A. N., Filippov, A. V.
Format: Article
Language:English
Subjects:
ALUMINIUM
Aluminum
APERTURES
Batteries
CHEMICAL VAPOR DEPOSITION
Classical and Continuum Physics
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Converters
Crystal structure
DIAMONDS
DOPED MATERIALS
ELECTRIC BATTERIES
ELECTRON BEAMS
Energy conversion efficiency
KEV RANGE 100-1000
LAYERS
MONOCRYSTALS
P-TYPE CONDUCTORS
Physics
Physics and Astronomy
SCHOTTKY BARRIER DIODES
Single crystals
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Summary:Diamond single-crystal Schottky barrier mip -structures (metal–intrinsic diamond– p -doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP p -diamond and CVD i -diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm 2 ) with a conversion efficiency of 2–3%.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018080023