A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam

New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of...

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Bibliographic Details
Published in:Technical physics letters 2018-04, Vol.44 (4), p.320-323
Main Authors: Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V.
Format: Article
Language:English
Subjects:
Bismuth
BISMUTH IONS
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Criteria
DEPTH
Depth profiling
ION BEAMS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
Physics
Physics and Astronomy
PROBES
RESOLUTION
Secondary ion mass spectrometry
SPUTTERING
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Summary:New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018040181