The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

Irradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-...

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Bibliographic Details
Published in:Technical physics letters 2018-03, Vol.44 (3), p.229-231
Main Authors: Ivanov, P. A., Potapov, A. S., Kudoyarov, M. F., Kozlovskii, M. A., Samsonova, T. P.
Format: Article
Language:English
Subjects:
Argon
ARGON IONS
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
Electrical resistivity
Heat treating
Heat treatment
HEAT TREATMENTS
IRRADIATION
LAYERS
MEV RANGE 10-100
N-TYPE CONDUCTORS
Physics
Physics and Astronomy
Silicon carbide
SILICON CARBIDES
SURFACES
TEMPERATURE RANGE 0273-0400 K
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Summary:Irradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10 13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10 7 Ω cm.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018030197