Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems

The thermodynamics and kinetics of the thermomigration of molten zones based on Al–Ga and Al–Ga melts in the preparation of silicon epilayers have been studied in detail. We have determined the threshold thermomigration temperature for zones of various compositions. The migration onset temperature h...

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Bibliographic Details
Published in:Inorganic materials 2018-01, Vol.54 (1), p.32-36
Main Authors: Kuznetsov, V. V., Lozovskii, V. N., Popov, V. P., Rubtsov, E. R., Seredin, B. M.
Format: Article
Language:English
Subjects:
ALUMINIUM
Aluminum
Chemical compounds
Chemistry
Chemistry and Materials Science
CONCENTRATION RATIO
GALLIUM
Gallium compounds
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
KINETICS
MATERIALS SCIENCE
Melts
MIGRATION
PHASE DIAGRAMS
SILICON
TEMPERATURE RANGE 0400-1000 K
THERMODYNAMICS
Thermomigration
TIN
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Summary:The thermodynamics and kinetics of the thermomigration of molten zones based on Al–Ga and Al–Ga melts in the preparation of silicon epilayers have been studied in detail. We have determined the threshold thermomigration temperature for zones of various compositions. The migration onset temperature has been shown to increase monotonically with increasing Ga or Sn concentration in the liquid phase. The thermomigration rate of Si–Al–Ga zones decreases with increasing gallium concentration at temperatures below 1473 K and increases at higher temperatures. The thermomigration rate of Si–Al–Sn zones decreases with increasing Sn concentration over the entire temperature range studied. No chemical compounds have been detected in the Si–Al–Ga or Si–Al–Sn system, which simplifies the use of the thermomigration method in these systems.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168518010065