Quantum Isotope Effect in Silicon at Low Temperatures

High-precision studies of Raman scattering in isotopically pure 28 Si, 29 Si, 30 Si single crystals have been performed in the temperature range from 8 to 300 K. It has been found that a difference of about (0.4 ± 0.1) cm –1 observed at temperatures T ≤ 100 K between the normalized Raman frequencies...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2019-02, Vol.128 (2), p.207-211
Main Authors: Enkovich, P. V., Brazhkin, V. V., Lyapin, S. G., Stishov, S. M.
Format: Article
Language:English
Subjects:
Atoms
Classical and Quantum Gravitation
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Damping
DIAMONDS
Elementary Particles
GERMANIUM
Isotope effect
ISOTOPE EFFECTS
Isotopes
Low temperature
Molecules
MONOCRYSTALS
Optics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Field Theory
RAMAN EFFECT
Raman spectra
Relativity Theory
Silicon
SILICON 28
SILICON 29
SILICON 30
Single crystals
Solid State Physics
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Summary:High-precision studies of Raman scattering in isotopically pure 28 Si, 29 Si, 30 Si single crystals have been performed in the temperature range from 8 to 300 K. It has been found that a difference of about (0.4 ± 0.1) cm –1 observed at temperatures T ≤ 100 K between the normalized Raman frequencies of the 28 Si and 30 Si isotopes measured with an accuracy of 0.1 cm –1 is certainly due to quantum effects damping with increasing temperature. The possibility of observing quantum isotope effects in germanium has been estimated using experimental data on isotope effects in diamond and silicon.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776119010102