Entrainment of Electrons in a Semiconductor Nanostructure by a Flow of Neutral Particles

The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wi...

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Bibliographic Details
Published in:Physics of the solid state 2018-12, Vol.60 (12), p.2645-2648
Main Authors: Gantsevich, S. V., Gurevich, V. L.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current carriers
ELECTRONS
ENTRAINMENT
ION BEAMS
Low-Dimensional Systems
Nanostructure
NEUTRAL PARTICLES
Physics
Physics and Astronomy
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
Solid State Physics
TWO-DIMENSIONAL SYSTEMS
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Summary:The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783419010086