Features of the Frequency Dependence of Capacitance–Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a p–n Junction with an Antireflective Film of Porous Silicon

• Published in: Technical physics 2018-12, Vol.63 (12), p.1824-1828
• Main Author: Tregulov, V. V.
• Format: Article
• Language: English
• Subjects: Antireflection coatings; CAPACITANCE; Capacitance-voltage characteristics; Classical and Continuum Physics; Coatings; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Converters; Dependence; ELECTRIC POTENTIAL; Electrochemical etching; ELECTROCHEMISTRY; EQUIVALENT CIRCUITS; ETCHING; FREQUENCY DEPENDENCE; Inhomogeneity; LAYERS; P-N JUNCTIONS; Photoelectricity; PHOTOLUMINESCENCE; Physics; Physics and Astronomy; POROUS MATERIALS; Porous silicon; Radiation (Physics); SEMICONDUCTOR MATERIALS; Sensors; SILICON; Silicon films; Solar energy industry; Solid State Electronics; SPECTRA; STRUCTURAL MODELS; SURFACE PROPERTIES; Surface structure; THIN FILMS; Universities and colleges
• ISSN: 1063-7842; 1090-6525
• DOI: 10.1134/S1063784218120204

The frequency dependence of capacitance–voltage characteristics of a semiconductor structure with an antireflective film of porous silicon, which was formed by electrochemical etching above a p – n junction, is studied. Photoluminescence spectra of layers of porous silicon of the experimental samples are also examined. It is demonstrated that the capacitance–voltage curves are shaped by competing influences of capacitances of the p – n junction and the surface structure forming in a porous Si film due to its inhomogeneity. A structural model of layers of the studied semiconductor structure and a capacitance equivalent circuit are proposed.