Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO{sub 2}(Y) Films

Local resistive switching by complex nonstationary signals in zirconium-dioxide-stabilized films on conducting substrates has been studied by atomic-force microscopy with a conducting probe. Film resistance was switched by triangular voltage pulses on which a high-frequency sinusoidal signal was sup...

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Bibliographic Details
Published in:Technical physics 2019-11, Vol.64 (11)
Main Authors: Filatov, D. O., Koryazhkina, M. N., Antonov, D. A., Antonov, I. N., Liskin, D. A., Ryabova, M. A., Gorshkov, O. N.
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONNECTORS
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
OXYGEN IONS
PULSES
SIGNALS
SURFACES
SWITCHES
THIN FILMS
VACANCIES
ZIRCONIUM OXIDES
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Summary:Local resistive switching by complex nonstationary signals in zirconium-dioxide-stabilized films on conducting substrates has been studied by atomic-force microscopy with a conducting probe. Film resistance was switched by triangular voltage pulses on which a high-frequency sinusoidal signal was superimposed. It is found that the ratio of currents through the junction between the probe and film surface in high-resistance and low-resistance states increases after the superposition of a sinusoidal signal (as compared to switching by simple triangular pulses). An increase in the temporal stability of the current strength in these states was also found when switching with a sinusoidal signal. This effect is associated with resonant activation of oxygen ion migration over vacancies in an external ac electric field.
ISSN:1063-7842
1090-6525