Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Conductivity inversion in thin n -InSe films under intense pulsed laser irradiation was obser. A p – n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same...

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Bibliographic Details
Published in:Technical physics 2019-04, Vol.64 (4), p.555-558
Main Authors: Kyazym-zade, A. G., Salmanov, V. M., Guseinov, A. G., Mamedov, R. M., Agamaliev, Z. A., Salmanova, A. A., Akhmedova, F. M.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conductivity
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
Electric properties
HEATING
Indium
INDIUM SELENIDES
Irradiation
LASER RADIATION
N-TYPE CONDUCTORS
Petroleum industry
Physics
Physics and Astronomy
PULSED IRRADIATION
Pulsed lasers
Solid State Electronics
THIN FILMS
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Summary:Conductivity inversion in thin n -InSe films under intense pulsed laser irradiation was obser. A p – n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784219040145