Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation

Low-energy ( E = 30 keV) Ag + ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10 15 to 1.5 × 10 17 ions cm –2 and an ion beam current density varying from 2 to 15 μA/cm 2 . The surface morphology of implanted wafers has been examined us...

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Bibliographic Details
Published in:Technical physics 2019-02, Vol.64 (2), p.195-202
Main Authors: Vorob’ev, V. V., Rogov, A. M., Osin, Yu. N., Nuzhdin, V. I., Valeev, V. F., Eidel’man, K. B., Tabachkova, N. Yu, Ermakov, M. A., Stepanov, A. L.
Format: Article
Language:English
Subjects:
Amorphization
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
BEAM CURRENTS
Classical and Continuum Physics
COARSE PARTICLES
Coarsening
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
ELECTRON DIFFRACTION
High energy electrons
Implantation
ION BEAMS
ION IMPLANTATION
IRRADIATION
KEV RANGE
MICROANALYSIS
Microscopes
Microscopy
MONOCRYSTALS
MORPHOLOGY
NANOPARTICLES
Particle size distribution
Physical Science of Materials
Physics
Physics and Astronomy
POROUS MATERIALS
RADIATION DOSES
REFLECTION
SCANNING ELECTRON MICROSCOPY
SILICON
SILVER
SILVER IONS
Single crystals
Surface layers
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
Wafers
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Summary:Low-energy ( E = 30 keV) Ag + ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10 15 to 1.5 × 10 17 ions cm –2 and an ion beam current density varying from 2 to 15 μA/cm 2 . The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10 15 ions cm –2 ), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10 17 ions cm –2 , a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784219020270