Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method

The admittance measurements of heterostructures with quantum wells (QW) In x Ga 1 – x As/GaAs (0.19 ≤ x ≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining me...

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Bibliographic Details
Published in:Technical physics letters 2018-12, Vol.44 (12), p.1171-1173
Main Authors: Ivanova, Ya. V., Zubkov, V. I., Solomonov, A. V.
Format: Article
Language:English
Subjects:
Broken symmetry
CAPACITANCE
Capacitance-voltage characteristics
CARRIERS
CHEMICAL VAPOR DEPOSITION
Classical and Continuum Physics
Computer simulation
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC POTENTIAL
Electrical impedance
EMISSION
Emission analysis
GALLIUM ARSENIDES
Heterostructures
Mathematical analysis
Physics
Physics and Astronomy
POTENTIALS
PROBABILITY
QUANTUM WELLS
Resistance
Resonant tunneling
SIMULATION
SPECTROSCOPY
Spectrum analysis
SYMMETRY BREAKING
TUNNEL EFFECT
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Summary:The admittance measurements of heterostructures with quantum wells (QW) In x Ga 1 – x As/GaAs (0.19 ≤ x ≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining mechanism inducing high-frequency conductance of doped heterostructures with QW, the separation of tunnel and resonant tunneling contributions was carried out, and the influence of tunnel component on the total rate of carrier emission from QW was analyzed. The self-consistent simulation of capacitance–voltage characteristics of the structures was performed, and the transmittance of the system formed by the Hartree potential around QW was calculated. Experimentally and by numerical calculations, it is shown that the probability of resonant tunneling emission decreases with increasing reverse bias due to the broken symmetry of the barriers.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018120453