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Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method
The admittance measurements of heterostructures with quantum wells (QW) In x Ga 1 – x As/GaAs (0.19 ≤ x ≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining me...
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| Published in: | Technical physics letters 2018-12, Vol.44 (12), p.1171-1173 |
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| container_end_page | 1173 |
| container_issue | 12 |
| container_start_page | 1171 |
| container_title | Technical physics letters |
| container_volume | 44 |
| creator | Ivanova, Ya. V. Zubkov, V. I. Solomonov, A. V. |
| description | The admittance measurements of heterostructures with quantum wells (QW) In
x
Ga
1 –
x
As/GaAs (0.19 ≤
x
≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining mechanism inducing high-frequency conductance of doped heterostructures with QW, the separation of tunnel and resonant tunneling contributions was carried out, and the influence of tunnel component on the total rate of carrier emission from QW was analyzed. The self-consistent simulation of capacitance–voltage characteristics of the structures was performed, and the transmittance of the system formed by the Hartree potential around QW was calculated. Experimentally and by numerical calculations, it is shown that the probability of resonant tunneling emission decreases with increasing reverse bias due to the broken symmetry of the barriers. |
| doi_str_mv | 10.1134/S1063785018120453 |
| format | article |
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x
Ga
1 –
x
As/GaAs (0.19 ≤
x
≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining mechanism inducing high-frequency conductance of doped heterostructures with QW, the separation of tunnel and resonant tunneling contributions was carried out, and the influence of tunnel component on the total rate of carrier emission from QW was analyzed. The self-consistent simulation of capacitance–voltage characteristics of the structures was performed, and the transmittance of the system formed by the Hartree potential around QW was calculated. Experimentally and by numerical calculations, it is shown that the probability of resonant tunneling emission decreases with increasing reverse bias due to the broken symmetry of the barriers.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785018120453</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Broken symmetry ; CAPACITANCE ; Capacitance-voltage characteristics ; CARRIERS ; CHEMICAL VAPOR DEPOSITION ; Classical and Continuum Physics ; Computer simulation ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DOPED MATERIALS ; ELECTRIC POTENTIAL ; Electrical impedance ; EMISSION ; Emission analysis ; GALLIUM ARSENIDES ; Heterostructures ; Mathematical analysis ; Physics ; Physics and Astronomy ; POTENTIALS ; PROBABILITY ; QUANTUM WELLS ; Resistance ; Resonant tunneling ; SIMULATION ; SPECTROSCOPY ; Spectrum analysis ; SYMMETRY BREAKING ; TUNNEL EFFECT</subject><ispartof>Technical physics letters, 2018-12, Vol.44 (12), p.1171-1173</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Nature B.V. 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c296t-f2d9d803824fa7ea2ee6a8e11d0a6b5594f7e32543cd6fa0bfabf2d800c10aa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22927842$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ivanova, Ya. V.</creatorcontrib><creatorcontrib>Zubkov, V. I.</creatorcontrib><creatorcontrib>Solomonov, A. V.</creatorcontrib><title>Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The admittance measurements of heterostructures with quantum wells (QW) In
x
Ga
1 –
x
As/GaAs (0.19 ≤
x
≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining mechanism inducing high-frequency conductance of doped heterostructures with QW, the separation of tunnel and resonant tunneling contributions was carried out, and the influence of tunnel component on the total rate of carrier emission from QW was analyzed. The self-consistent simulation of capacitance–voltage characteristics of the structures was performed, and the transmittance of the system formed by the Hartree potential around QW was calculated. Experimentally and by numerical calculations, it is shown that the probability of resonant tunneling emission decreases with increasing reverse bias due to the broken symmetry of the barriers.</description><subject>Broken symmetry</subject><subject>CAPACITANCE</subject><subject>Capacitance-voltage characteristics</subject><subject>CARRIERS</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Classical and Continuum Physics</subject><subject>Computer simulation</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical impedance</subject><subject>EMISSION</subject><subject>Emission analysis</subject><subject>GALLIUM ARSENIDES</subject><subject>Heterostructures</subject><subject>Mathematical analysis</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POTENTIALS</subject><subject>PROBABILITY</subject><subject>QUANTUM WELLS</subject><subject>Resistance</subject><subject>Resonant tunneling</subject><subject>SIMULATION</subject><subject>SPECTROSCOPY</subject><subject>Spectrum analysis</subject><subject>SYMMETRY BREAKING</subject><subject>TUNNEL EFFECT</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LAzEQhhdRsFZ_gLeA59VJsh_ZY2n9gopoCx6XNDvbbtkma5JFe_eHm1qhB_GUgTzPTN5MFF1SuKaUJzczChnPRQpUUAZJyo-iAYUC4izl_HhXZzze3Z9GZ86tAUCwtBhEX7efHdpmg9rLlkzQo_KN0cTU5BWd0VJ7Mu-1xrbRS9Jo4ldIJqbDisy87ZXvLZKPxq-IJLOAtEhe-iD1G_KGbUsW2x9jVG0a76VWSGZdGGGNU6bbkif0K1OdRye1bB1e_J7DaH53Ox8_xNPn-8fxaBorVmQ-rllVVAK4YEktc5QMMZMCKa1AZos0LZI6R87ShKsqqyUsarkIjgBQFKTkw-hq39Y435RONSHsSpkQTvmSsYLlImEHqrPmvUfny7XprQ7vKhkVeZEnOdBA0T2lQhRnsS678IvSbksK5W4j5Z-NBIftHRdYvUR76Py_9A2k947E</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Ivanova, Ya. V.</creator><creator>Zubkov, V. I.</creator><creator>Solomonov, A. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20181201</creationdate><title>Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method</title><author>Ivanova, Ya. V. ; Zubkov, V. I. ; Solomonov, A. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c296t-f2d9d803824fa7ea2ee6a8e11d0a6b5594f7e32543cd6fa0bfabf2d800c10aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Broken symmetry</topic><topic>CAPACITANCE</topic><topic>Capacitance-voltage characteristics</topic><topic>CARRIERS</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Classical and Continuum Physics</topic><topic>Computer simulation</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electrical impedance</topic><topic>EMISSION</topic><topic>Emission analysis</topic><topic>GALLIUM ARSENIDES</topic><topic>Heterostructures</topic><topic>Mathematical analysis</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POTENTIALS</topic><topic>PROBABILITY</topic><topic>QUANTUM WELLS</topic><topic>Resistance</topic><topic>Resonant tunneling</topic><topic>SIMULATION</topic><topic>SPECTROSCOPY</topic><topic>Spectrum analysis</topic><topic>SYMMETRY BREAKING</topic><topic>TUNNEL EFFECT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ivanova, Ya. V.</creatorcontrib><creatorcontrib>Zubkov, V. I.</creatorcontrib><creatorcontrib>Solomonov, A. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ivanova, Ya. V.</au><au>Zubkov, V. I.</au><au>Solomonov, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>44</volume><issue>12</issue><spage>1171</spage><epage>1173</epage><pages>1171-1173</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The admittance measurements of heterostructures with quantum wells (QW) In
x
Ga
1 –
x
As/GaAs (0.19 ≤
x
≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the resonant tunneling emission was for the first time registered as the determining mechanism inducing high-frequency conductance of doped heterostructures with QW, the separation of tunnel and resonant tunneling contributions was carried out, and the influence of tunnel component on the total rate of carrier emission from QW was analyzed. The self-consistent simulation of capacitance–voltage characteristics of the structures was performed, and the transmittance of the system formed by the Hartree potential around QW was calculated. Experimentally and by numerical calculations, it is shown that the probability of resonant tunneling emission decreases with increasing reverse bias due to the broken symmetry of the barriers.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785018120453</doi><tpages>3</tpages></addata></record> |
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| ispartof | Technical physics letters, 2018-12, Vol.44 (12), p.1171-1173 |
| issn | 1063-7850 1090-6533 |
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| source | Springer Nature |
| subjects | Broken symmetry CAPACITANCE Capacitance-voltage characteristics CARRIERS CHEMICAL VAPOR DEPOSITION Classical and Continuum Physics Computer simulation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOPED MATERIALS ELECTRIC POTENTIAL Electrical impedance EMISSION Emission analysis GALLIUM ARSENIDES Heterostructures Mathematical analysis Physics Physics and Astronomy POTENTIALS PROBABILITY QUANTUM WELLS Resistance Resonant tunneling SIMULATION SPECTROSCOPY Spectrum analysis SYMMETRY BREAKING TUNNEL EFFECT |
| title | Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method |
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