Properties of the Barium–Strontium Titanate Films Deposited onto the Silicon Substrate by rf Cathode Sputtering

Using rf cathode sputtering of a target in the oxygen atmosphere, Ba 0.6 Sr 0.4 TiO 3 solid solution thin films have been formed on the single-crystal Si(001) cut surface and their crystal structure, microstructure, and optical characteristics have been investigated. It is shown that the films are o...

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Bibliographic Details
Published in:Technical physics letters 2018-12, Vol.44 (12), p.1157-1159
Main Authors: Shirokov, V. B., Zinchenko, S. P., Kiseleva, L. I., Pavlenko, A. V.
Format: Article
Language:English
Subjects:
ANISOTROPY
BARIUM COMPOUNDS
Barium strontium titanates
Buffer layers
CATHODE SPUTTERING
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROLLED ATMOSPHERES
CRYSTAL STRUCTURE
Crystals
DEPOSITION
MICROSTRUCTURE
MONOCRYSTALS
OPTICAL PROPERTIES
OXYGEN
Physics
Physics and Astronomy
POLYCRYSTALS
SILICON
SILICON OXIDES
Silicon substrates
Single crystals
SOLID SOLUTIONS
STRONTIUM TITANATES
SYNTHESIS
Thickness
THIN FILMS
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Summary:Using rf cathode sputtering of a target in the oxygen atmosphere, Ba 0.6 Sr 0.4 TiO 3 solid solution thin films have been formed on the single-crystal Si(001) cut surface and their crystal structure, microstructure, and optical characteristics have been investigated. It is shown that the films are optically anisotropic, polycrystalline, and have a c axis preferred direction perpendicular to the substrate. The a and b axes in the substrate plane have no preferred direction. It has been established that, during the synthesis, a buffer layer with a thickness of about 20 nm forms between the film and substrate, which is optically equivalent to silicon oxide.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018120568