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Observation of Nanometric Silicon Oxide Bifilms in a Water-Atomized Hypereutectic Cast Iron Powder
This study investigated the reasons for the irregular structure of primary graphite nodules that were formed in a hypereutectic cast iron powder during water atomization. The graphite nodules contain a significant amount of micron-sized pores and multiple nanometric voids that formed from silicon ox...
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Published in: | Metallurgical and materials transactions. B, Process metallurgy and materials processing science Process metallurgy and materials processing science, 2016-10, Vol.47 (5), p.2971-2978 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | This study investigated the reasons for the irregular structure of primary graphite nodules that were formed in a hypereutectic cast iron powder during water atomization. The graphite nodules contain a significant amount of micron-sized pores and multiple nanometric voids that formed from silicon oxide bifilms. The bifilms theory is often used to explain the mechanisms responsible for the presence of pores in castings. However, even if many results presented in the literature tend to corroborate the existence of bifilms, to this date, only indirect evidences of their existence were presented. The observations presented in this paper are the first to show the double-sided nature of these defects. These observations support the bifilms theory and give an explanation for the presence of porosities in castings. The bifilms were used as substrate for graphite growth during solidification. The irregular structure of the graphite nodules is a consequence of the rather random structure of the bifilms that were introduced in the melt as a result of turbulences on the surface of the melt during pouring. The confirmation of the existence of bifilms can contribute to the understanding of the mechanical properties of various metallic parts. |
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ISSN: | 1073-5615 1543-1916 |
DOI: | 10.1007/s11663-016-0730-x |