Schottky Diodes on Heterostructures with Two-Dimensional Electron Gas

The results of studies of the characteristics of contacts with Schottky barriers on a pseudomorphic AlGaAs/InGaAs heterostructure are presented. The Ti-based Schottky diodes were created by a standard pHEMT technology. It is shown that the parameters of the fabricated contacts with Schottky barriers...

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Bibliographic Details
Published in:Russian physics journal 2019-04, Vol.61 (12), p.2159-2166
Main Authors: Yushchenko, A. Yu, Ayzenshtat, G. I., Fedotova, F. I.
Format: Article
Language:English
Subjects:
ALUMINIUM
ALUMINIUM ARSENIDES
Aluminum gallium arsenides
Comparative analysis
Condensed Matter Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC POTENTIAL
ELECTRON GAS
Electrons
Epitaxy
GALLIUM ARSENIDES
Hadrons
Heavy Ions
HEIGHT
Heterostructures
INDIUM ARSENIDES
Indium gallium arsenides
Lasers
Mathematical and Computational Physics
MOLECULAR BEAM EPITAXY
MOLYBDENUM
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
SCHOTTKY BARRIER DIODES
Schottky diodes
Technology
Theoretical
Threshold voltage
TWO-DIMENSIONAL SYSTEMS
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Summary:The results of studies of the characteristics of contacts with Schottky barriers on a pseudomorphic AlGaAs/InGaAs heterostructure are presented. The Ti-based Schottky diodes were created by a standard pHEMT technology. It is shown that the parameters of the fabricated contacts with Schottky barriers are close to the characteristics of ideal contacts based on aluminum or molybdenum created in the process of molecular beam epitaxy. It is also shown that as compared to the diodes based on AlGaAs homostructures, the measured Schottky barrier height is smaller and the ideality factor is higher in diodes created on pseudomorphic heterostructures. Along with the well-known methods for determining the Schottky-barrier height, we tested a technique based on the measurement of the threshold voltage in diodes with a two-dimensional electron gas.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-019-01652-9