Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2019-09, Vol.53 (9), p.1222-1228
• Main Authors: Puzanov, A. S., Venediktov, M. M., Obolenskiy, S. V., Kozlov, V. A.
• Format: Article
• Language: English
• Subjects: 2019; Circuit design; Computer memory; Computer simulation; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; EXPERIMENT RESULTS; FISSION SPECTRA; IRRADIATION; Magnetic Materials; Magnetism; March 11–14; MEMORY DEVICES; MICROELECTRONICS; NANOELECTRONICS; NEUTRON FLUX; Nizhny Novgorod; Norms; NUCLEAR REACTIONS; Physics; Physics and Astronomy; RADIATION EFFECTS; Reaction products; Recoil atoms; RECOILS; SIMULATION; TRANSISTORS; Xxiii International Symposium “Nanophysics and Nanoelectronics”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619090173

The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.