Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses

The formation of antisite defects in Ge 20 Te 80 and Ge 15 As 4 Te 81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the 119 mm Sn( 119 m Sn), 119 m Te( 119 m Sn), 125 Sn( 125 Te), and 125 m Te( 125...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-05, Vol.53 (5), p.711-716
Main Authors: Marchenko, A. V., Seregin, P. P., Terukov, E. I., Shakhovich, K. B.
Format: Article
Language:English
Subjects:
Amorphous
Antisite defects
ATOMS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
GERMANIUM
GERMANIUM ALLOYS
GLASS
Magnetic Materials
Magnetism
Mossbauer spectroscopy
Organic Semiconductors
Physics
Physics and Astronomy
SEMICONDUCTOR MATERIALS
TELLURIUM
TELLURIUM 119
TELLURIUM 125
TIN
TIN 119
TIN 125
Vitreous
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Summary:The formation of antisite defects in Ge 20 Te 80 and Ge 15 As 4 Te 81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the 119 mm Sn( 119 m Sn), 119 m Te( 119 m Sn), 125 Sn( 125 Te), and 125 m Te( 125 Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619050166