Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombinat...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-04, Vol.53 (4), p.428-433
Main Authors: Bazhenov, N. L., Mynbaev, K. D., Semakova, A. A., Zegrya, G. G.
Format: Article
Language:English
Subjects:
Augers
CARRIER LIFETIME
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current carriers
ELECTRONIC STRUCTURE
Energy gap
INDIUM ANTIMONIDES
INDIUM ARSENIDES
Interaction with Radiation
L-S COUPLING
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
RECOMBINATION
SEMICONDUCTOR MATERIALS
Semiconductors (Materials)
SOLID SOLUTIONS
Spectroscopy
Splitting
TEMPERATURE DEPENDENCE
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Summary:Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619040043