Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect o...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (16), p.2092-2095
Main Authors: Fedorov, V. V., Bolshakov, A. D., Dvoretckaia, L. N., Sapunov, G. A., Kirilenko, D. A., Mozharov, A. M., Shugurov, K. Yu, Shkoldin, V. A., Cirlin, G. E., Mukhin, I. S.
Format: Article
Language:English
Subjects:
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
Electron microscopy
Epitaxial growth
Epitaxy
GALLIUM PHOSPHIDES
Heterostructures
Magnetic Materials
Magnetism
Microscopy
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
Physics
Physics and Astronomy
Polytypes
SCANNING ELECTRON MICROSCOPY
SILICON
Silicon substrates
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
Wurtzite
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Summary:Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261816008X