Spin Injection and Accumulation in the Planar NiFe–InSb–NiFe and NiFe–Cu–NiFe Spin Valves

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (14), p.1871-1874
• Main Authors: Nikulin, Y. V., Khivintsev, Y. V., Veselov, A. G., Filimonov, Y. A.
• Format: Article
• Language: English
• Subjects: Accumulation; BUILDUP; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Configurations; COPPER; CURRENTS; Dependence; DETECTION; ELECTRIC POTENTIAL; Indium antimonide; INDIUM ANTIMONIDES; Injection current; Intermetallic compounds; Iron compounds; Magnetic Materials; Magnetism; MAGNETORESISTANCE; Magnetoresistivity; MEASURING METHODS; NICKEL COMPOUNDS; Physics; Physics and Astronomy; SPIN; Spin valves; Spin-Related Phenomena in Nanostructures; Spintronics
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782618140221

Spin injection and accumulation have been studied for NiFe–InSb–NiFe and NiFe–Cu–NiFe planar spin valves with direct injection current I in nonlocal (NLSV) and local (LSV) measurement configurations at temperature 8–300 K. The value of the generated voltage U and the character of the dependence U ( I ) drastically changed for currents I greater some critical value I c due to thermoelectric effects. For NLSV configuration and currents I < I c the value of U is of 2–3 order of magnitude higher for NiFe–InSb–NiFe ( U  ≈ 1–3 mV at 300 K) structures in comparison with NiFe–Cu–NiFe ( U ≈ 4–20 µV at 8 K). For LSV geometry electrical detection of spin current was observed only for NiFe–Cu–NiFe structure, where for I < I c the magnetoresistance ( MR ) effect of the order 0.5% was detected. For currents I of 1.5–2% higher than I c the MR of the order of 10–30% was observed for both NLSV and LSV configurations for studied structures.