Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer

High performance InAs/GaSb superlattices for long-wavelength infrared detection were grown on a 4-in. GaSb wafer using molecular beam epitaxy. The influence of the growth temperature, V/III BEP ratio on the surface morphology and microstructure was researched. The good uniformity of the surface roug...

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Bibliographic Details
Published in:Optical and quantum electronics 2019-09, Vol.51 (9), p.1-8, Article 293
Main Authors: Qi, Tong-Tong, Guo, Jie, Hao, Rui-Ting, Liu, Yu, Chang, Fa-Ran, Jiang, Zhi, He, Xiao-Wu, Jiang, Dong-Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
CRYSTALLIZATION
Cut off wavelength
DARK CURRENT
DETECTION
Diffusion barriers
Electrical Engineering
Epitaxial growth
FABRICATION
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
Lasers
MATERIALS SCIENCE
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NOISE
Optical Devices
Optics
PHOTODIODES
Photonics
Physics
Physics and Astronomy
QUANTUM EFFICIENCY
ROUGHNESS
SUPERLATTICES
Surface roughness
SURFACES
Thermal noise
WAVELENGTHS
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Summary:High performance InAs/GaSb superlattices for long-wavelength infrared detection were grown on a 4-in. GaSb wafer using molecular beam epitaxy. The influence of the growth temperature, V/III BEP ratio on the surface morphology and microstructure was researched. The good uniformity of the surface roughness and crystallization at four location along the radial direction on the wafer was obtained by balancing the inner and outer growth temperature. The performance deviation of the four photodiodes fabricated using the superlattices from center to edge on the wafer was below 20% which revealed the uniformity of the superlattice growth and the fabrication process. The 50% cutoff wavelength was about 12 μm. The peak responsivity was 2.54 A/W corresponding to a quantum efficiency of 35.1% at 77 K. The zero bias differential resistance-area product (R 0 A) was 2.1 Ω cm 2 due to the barrier structure design which restrains the diffusion dark current. The calculated Johnson noise limited detectivity was 5.75 × 10 10  cm √Hz/W at 10 μm and 4.13 × 10 10  cm √Hz/W at 14 μm.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-019-1988-4