Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP

• Published in: Optical and quantum electronics 2019-04, Vol.51 (4), p.1-16, Article 100
• Main Authors: Sebastian, S., Kulandaisamy, I., Arulanantham, A. M. S., Valanarasu, S., Kathalingam, A., Jesu Jebathew, A., Shkir, Mohd, Karunakaran, M.
• Format: Article
• Language: English
• Subjects: Aluminum; ATOMIC FORCE MICROSCOPY; Characterization and Evaluation of Materials; Computer Communication Networks; CONCENTRATION RATIO; Crystal structure; DOPED MATERIALS; Doping; Doppler effect; Electrical Engineering; Lasers; NANOFILMS; NANOSCIENCE AND NANOTECHNOLOGY; Optical Devices; Optics; Optoelectronics; ORTHORHOMBIC LATTICES; OSCILLATION MODES; Photonics; Photovoltaic cells; Physics; Physics and Astronomy; PYROLYSIS; RAMAN SPECTROSCOPY; Red shift; SHRINKAGE; SOLAR CELLS; Spray pyrolysis; SPRAYS; TEMPERATURE RANGE 0273-0400 K; Thin films; TIN SULFIDES; Vibration mode; X-RAY DIFFRACTION
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-019-1812-1

Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B 1g , B 2g , and B 3g vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72 eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722 nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695×10 −1 Ω cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.