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Optimal absorber thickness in long-wave multiple-stage detector
The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection ( λ cut - off = 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorp...
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Published in: | Optical and quantum electronics 2019-02, Vol.51 (2), p.1-6, Article 57 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection (
λ
cut
-
off
= 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorption coefficients
α
and carrier lifetimes
τ
published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity
D
*
value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25 ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for
τ
≥ 80 ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient
α
and the number of stages
N
S
, but also on the carrier diffusion length
L
. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb. |
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ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-019-1771-6 |