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Optimal absorber thickness in long-wave multiple-stage detector
The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection ( λ cut - off = 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorp...
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| Published in: | Optical and quantum electronics 2019-02, Vol.51 (2), p.1-6, Article 57 |
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| cites | cdi_FETCH-LOGICAL-c387t-7391864b40d78a57629800719d6f1b2d29acb2e30b914fdbea54e868a8806c0a3 |
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| container_title | Optical and quantum electronics |
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| creator | Hackiewicz, Klaudia Martyniuk, Piotr Rutkowski, Jarosław |
| description | The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection (
λ
cut
-
off
= 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorption coefficients
α
and carrier lifetimes
τ
published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity
D
*
value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25 ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for
τ
≥ 80 ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient
α
and the number of stages
N
S
, but also on the carrier diffusion length
L
. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb. |
| doi_str_mv | 10.1007/s11082-019-1771-6 |
| format | article |
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λ
cut
-
off
= 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorption coefficients
α
and carrier lifetimes
τ
published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity
D
*
value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25 ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for
τ
≥ 80 ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient
α
and the number of stages
N
S
, but also on the carrier diffusion length
L
. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-019-1771-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorbers ; ABSORPTION ; Absorptivity ; CARRIER LIFETIME ; CARRIERS ; Characterization and Evaluation of Materials ; Computer Communication Networks ; Dependence ; DETECTION ; DIFFUSION LENGTH ; Electrical Engineering ; ENGINEERING ; GALLIUM ANTIMONIDES ; INDIUM ARSENIDES ; Infrared detectors ; Lasers ; Mathematical analysis ; NOISE ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Sensors ; SUPERLATTICES ; TEMPERATURE RANGE 0273-0400 K ; THICKNESS</subject><ispartof>Optical and quantum electronics, 2019-02, Vol.51 (2), p.1-6, Article 57</ispartof><rights>The Author(s) 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-7391864b40d78a57629800719d6f1b2d29acb2e30b914fdbea54e868a8806c0a3</citedby><cites>FETCH-LOGICAL-c387t-7391864b40d78a57629800719d6f1b2d29acb2e30b914fdbea54e868a8806c0a3</cites><orcidid>0000-0001-6368-2713</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22950390$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hackiewicz, Klaudia</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><creatorcontrib>Rutkowski, Jarosław</creatorcontrib><title>Optimal absorber thickness in long-wave multiple-stage detector</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection (
λ
cut
-
off
= 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorption coefficients
α
and carrier lifetimes
τ
published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity
D
*
value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25 ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for
τ
≥ 80 ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient
α
and the number of stages
N
S
, but also on the carrier diffusion length
L
. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb.</description><subject>Absorbers</subject><subject>ABSORPTION</subject><subject>Absorptivity</subject><subject>CARRIER LIFETIME</subject><subject>CARRIERS</subject><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Dependence</subject><subject>DETECTION</subject><subject>DIFFUSION LENGTH</subject><subject>Electrical Engineering</subject><subject>ENGINEERING</subject><subject>GALLIUM ANTIMONIDES</subject><subject>INDIUM ARSENIDES</subject><subject>Infrared detectors</subject><subject>Lasers</subject><subject>Mathematical analysis</subject><subject>NOISE</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Sensors</subject><subject>SUPERLATTICES</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>THICKNESS</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOI7-AHcF19F70zaPlcjgCwZmo-AupG0607HT1CSj-O_NUMGVq7v5zrmHj5BLhGsEEDcBESSjgIqiEEj5EZlhKRiVKN6OyQxy4FQqVKfkLIQtAPCihBm5XY2x25k-M1VwvrI-i5uufh9sCFk3ZL0b1vTLfNpst-9jN_aWhmjWNmtstHV0_pyctKYP9uL3zsnrw_3L4okuV4_Pi7slrXMpIhW5QsmLqoBGSFMKzpRMs1E1vMWKNUyZumI2h0ph0TaVNWVhJZdGSuA1mHxOrqZeF2KnQ92l95vaDUNaoRlTJeQK_qjRu4-9DVFv3d4PaZhmSYtiOWeYKJyo2rsQvG316JMD_60R9MGmnmzqZFMfbGqeMmzKhMQOa-v_mv8P_QBU4nXp</recordid><startdate>20190201</startdate><enddate>20190201</enddate><creator>Hackiewicz, Klaudia</creator><creator>Martyniuk, Piotr</creator><creator>Rutkowski, Jarosław</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-6368-2713</orcidid></search><sort><creationdate>20190201</creationdate><title>Optimal absorber thickness in long-wave multiple-stage detector</title><author>Hackiewicz, Klaudia ; Martyniuk, Piotr ; Rutkowski, Jarosław</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-7391864b40d78a57629800719d6f1b2d29acb2e30b914fdbea54e868a8806c0a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Absorbers</topic><topic>ABSORPTION</topic><topic>Absorptivity</topic><topic>CARRIER LIFETIME</topic><topic>CARRIERS</topic><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Dependence</topic><topic>DETECTION</topic><topic>DIFFUSION LENGTH</topic><topic>Electrical Engineering</topic><topic>ENGINEERING</topic><topic>GALLIUM ANTIMONIDES</topic><topic>INDIUM ARSENIDES</topic><topic>Infrared detectors</topic><topic>Lasers</topic><topic>Mathematical analysis</topic><topic>NOISE</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Sensors</topic><topic>SUPERLATTICES</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>THICKNESS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hackiewicz, Klaudia</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><creatorcontrib>Rutkowski, Jarosław</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hackiewicz, Klaudia</au><au>Martyniuk, Piotr</au><au>Rutkowski, Jarosław</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimal absorber thickness in long-wave multiple-stage detector</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2019-02-01</date><risdate>2019</risdate><volume>51</volume><issue>2</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><artnum>57</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>The detectivity characteristics of interband cascade infrared type-II superlattice detectors for long-wave infrared detection (
λ
cut
-
off
= 8 μm at room temperature) are discussed. We present comparison of two superlattices: InAs/GaSb and InAs/InAsSb, assuming the characteristic parameters—absorption coefficients
α
and carrier lifetimes
τ
published in literature. Dependence of the Johnson-noise limited detectivity on the absorber thickness for a different number of stages is reported. Higher detectivity
D
*
value can be achieved by increasing the carrier lifetime. However, for detectors based on type-II InAs/GaSb superlattice increasing the carrier lifetime up to 25 ns leads to a situation in which one stage is preferred, i.e. for detector with a single absorber, we obtain the highest detectivity value. In the case of InAs/InAsSb material, the situation is similar for
τ
≥ 80 ns. We have shown that the optimal absorber thickness at which the highest detectivity values are obtained depends not only on the absorption coefficient
α
and the number of stages
N
S
, but also on the carrier diffusion length
L
. According to a calculations, cascade detectors based on Ga-free material should have much higher optimal absorber thicknesses than materials based on InAs/GaSb.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-019-1771-6</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6368-2713</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | Absorbers ABSORPTION Absorptivity CARRIER LIFETIME CARRIERS Characterization and Evaluation of Materials Computer Communication Networks Dependence DETECTION DIFFUSION LENGTH Electrical Engineering ENGINEERING GALLIUM ANTIMONIDES INDIUM ARSENIDES Infrared detectors Lasers Mathematical analysis NOISE Optical Devices Optics Photonics Physics Physics and Astronomy Sensors SUPERLATTICES TEMPERATURE RANGE 0273-0400 K THICKNESS |
| title | Optimal absorber thickness in long-wave multiple-stage detector |
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